General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

■ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A

■ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A

■ High performance trench technology for extremely low RDS(ON)

■ Low gate charge

■ High power and current handling capability

■ RoHS Compliant

Applications

■ DC/DC converters