Features

Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A

Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A

High performance trench technology for extremely low rDS(on)

RoHS Compliant

General Description

This P-Channel MOSFET has been produced using On Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation

losses in converter/inverter applications.

Applications

Control switch in synchronous & non-synchronous buck

Load switch

Inverter