General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

■ 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V

RDS(ON) = 20 mΩ @ VGS = 4.5 V

■ Fast switching speed

■ Low gate charge

■ High performance trench technology for extremely low RDS(ON)

■ High power and current handling capability