General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

• –10 A, –20 V. RDS(ON) = 11 mΩ @ VGS = –4.5 V RDS(ON) = 14 mΩ @ VGS = –2.5 V RDS(ON) = 20 mΩ @VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Applications

• Power management

• Load switch

• Battery protection