General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

• Fast switching speed

• Low gate charge (8nC typical)

Applications

• DC/DC converter