PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very low equivalent on-resistance; RCE(sat) 125mΩ at 2A * Gain of 200 at IC=1 Amp and very low saturation voltage APPLICATIONS * DC-DC converters, Siren drivers.

PNP Low Saturation Transistor

PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

SOT223 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -40V • IC = -3A High Continuous Current • ICM = -6A Peak Pulse Current • Very Low Equivalent On-Resistance; RCE(sat) 125mΩ at 2A • hFE of 200 at IC=1A and Very Low Saturation Voltage • Complementary NPN Type: FZT690B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) •

PNP Silicon Planar Medium Power High Gain Transistor

Features ● Low equivalent on-resistance; RCE(sat) 125mΩ at 2A. ● Gain of 200 at IC=1 Amps and Very low saturation voltage.

PNP Low Saturation Transistor

Description These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 3A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40V PNP MEDIUM POWER TRANSISTOR IN SOT223

文件：606.97 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 40V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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