25VPNPMEDIUMPOWERTRANSISTORINSOT223

Features •BVCEO>-25V •IC=-3AhighContinuousCurrent •LowsaturationvoltageVCE(sat)

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PWR LOW SAT TRANSISTOR SOT223 T\u0026 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ComplementaryPlasticSiliconPowerTransistors

...designedforlowpoweraudioamplifierandlow-current,highspeedswitchingapplications. •HighCollector-EmitterSustainingVoltage—VCEO(sus)=80Vdc(Win)—BD789,BD790=100Vdc(Min)—BD791,BD792 •HighDCCurrentGain@IQ=200mAdchpE=40-250 •LowCollector-EmitterSatura

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors ...designedforlowpoweraudioamplifierandlow–current,highspeedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)—BD789,BD790 =100Vdc(Min)—BD791,BD792 •Hi

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *8APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *LowSaturationVoltageE.g.10mvTyp.

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO>-25V •IC=-3AhighContinuousCurrent •ICM=-8APeakPulseCurrent •LowsaturationvoltageVCE(sat)

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●8Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.10mvTyp.