PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP Silicon Planar Medium Power High Gain Transistor

Features ● Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. ● Gain of 300 at IC=2 Amps and Very low saturation voltage.

SOT223 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -15V • BVCBO > -15V • IC = -3A High Continuous Current • hFE > 300 @ -2A and Low Saturation Voltage • Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A • Complementary NPN Type: FZT688B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features • BVCEO > -15V • BVCBO > -15V • IC = -3A High Continuous Current • hFE > 300 @ -2A and Low Saturation Voltage • Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A • Complementary NPN Type: FZT688B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 15V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP, 15V, 3A, SOT223

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 15V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

Complementary Plastic Silicon Power Transistors

BD787 -> NPN BD788 -> PNP 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS . . . designedfor lower power audio amplifier and lowcurrent, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) — BD787, BD78

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

CATV amplifier module

General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). The module consists of two cascaded stages both in cascode configuration. Features ■ Excellent linearity ■ Extremely low noise ■ High gain ■ Excellent return loss p

Integrated Circuit IF System for FM Receiver

Description: The NTE788 is a monolithic integrated circuit in a 16–Lead DIP type package that provides all the functions of a comprehensive FM–IF system. This device features a three–stage FM–IF amplifier/limiter configuration with level detectors for each stage, a doubly–balanced quadrature FM