PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

PNP Silicon Planar Medium Power High Gain Transistor

Features ● Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. ● Gain of 300 at IC=2 Amps and Very low saturation voltage.

SOT223 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -15V • BVCBO > -15V • IC = -3A High Continuous Current • hFE > 300 @ -2A and Low Saturation Voltage • Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A • Complementary NPN Type: FZT688B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features • BVCEO > -15V • BVCBO > -15V • IC = -3A High Continuous Current • hFE > 300 @ -2A and Low Saturation Voltage • Extremely Low Equivalent On-Resistance RCE(sat) 93mΩ at -3A • Complementary NPN Type: FZT688B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 15V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP, 15V, 3A, SOT223

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

文件：93.27 Kbytes Page：2 Pages

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 15V 3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

文件：950.85 Kbytes Page：7 Pages

DPDT and 3PDT 10 A

Description The 788 Series square base, plug-in relays offer clear, full-feature, top flange, and side flange covers as well as optional sockets and accessories.

DPDT and 3PDT 10 A

Description The 788 Series square base, plug-in relays offer clear, full-feature, top flange, and side flange covers as well as optional sockets and accessories.

2.5ohm, 1.8V to 5.5V, -2.5 V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

2.5ohm, 1.8V to 5.5V, -2.5 V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2

2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages

GENERAL DESCRIPTION The ADG786 and ADG788 are low voltage, CMOS devices comprising three independently selectable SPDT (single pole, double throw) switches and four independently selectable SPDT switches respectively. Low power consumption and operating supply range of 1.8 V to 5.5 V and dual ±2