POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

Complementary Plastic Silicon Power Transistors

BD787 -> NPN BD788 -> PNP 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS . . . designedfor lower power audio amplifier and lowcurrent, high–speed switching applications. • Low Collector–Emitter Sustaining Voltage VCEO(sus)60 Vdc (Min) — BD787, BD78

Silicon PNP Power Transistor

COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 45, 6O VOLTS 15 WATTS

4.0 A, 60 V PNP Bipolar Power Transistor

The 4 A, 60 V PNP Bipolar Power Transistor is designed for lower power audio amplifier and low current, high speed switching applications. The BD787 and BD788 are complementary devices. • Low Collector-Emitter Sustaining VoltageVCEO(sus) 60 Vdc (Min)BD787, BD788\n• High Current-GainBandwidth ProductfT = 50 MHz (Min) @ IC = 100 mAdc\n• Collector-Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc\n• Pb-Free Packages are Available;

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon PNP Power Transistor

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Complementary Plastic Silicon Power Transistors

文件：78.93 Kbytes Page：6 Pages

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features • Low Collector−Emitter Sustaining Voltage − VCEO(sus)60 Vdc (Min) • High Current−Gain − Bandwidth Product fT=

LED照明驱动器 CELLULAR XENON TUBE DRVR

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS PNP 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Plastic Silicon Power Transistors

文件：78.93 Kbytes Page：6 Pages

CATV amplifier module

General description Hybrid high dynamic range amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). The module consists of two cascaded stages both in cascode configuration. Features ■ Excellent linearity ■ Extremely low noise ■ High gain ■ Excellent return loss p

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Low equivalent on-resistance; RCE(sat) 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits

Integrated Circuit IF System for FM Receiver

Description: The NTE788 is a monolithic integrated circuit in a 16–Lead DIP type package that provides all the functions of a comprehensive FM–IF system. This device features a three–stage FM–IF amplifier/limiter configuration with level detectors for each stage, a doubly–balanced quadrature FM