PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features and Benefits • BVCEO > -25V • Maximum Continuous Current IC = -4A • Peak Pulse Current IC = -10A • High Gain Holds Up hFE > 195 @IC = -2A • Very Low Equivalent On-Resistance; RCE(sat) = 130mΩ at -2A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 25V 4A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO= -25V * 4 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation voltage * High Gain

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat)67mΩ at 3A

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat)67mΩ at 3A

Low Collector Saturation Voltage Built-in Damper Diode at E-C

Low Collector Saturation Voltage Built-in Damper Diode at E-C • High DC Current Gain • High Power Dissipation : PC=1.3W (Ta=25°C)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain