SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 25V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

25V NPN MEDIUM POWER TRANSISTOR

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封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 25V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Inst, 4 Pr #18 Str BC, PVC-NYL Ins E1, IS/OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 4 Pair 18AWG (7x26) Bare Copper, PVC-NYL Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR

Base station LDMOS transistor

DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. FEATURES • Typical performance at a supply voltage of 27 V: – 1-tone CW; IDQ = 1000 mA – Output power = 125 W – Gain = 16.5 dB – Efficiency = 54 – EDGE outpu

Audio Frequency Amplifier Applications

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MINIMIZE POWER LOSSES OF LIGHTLY LOADED FLYBACK

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GULLWING CASCADABLE ARJ1049 AMPLIFIER

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