丝印代码：FZT1048A；17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

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17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 17.5V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A

NPN Silicon Planar Medium Power High Gain Transistor

■ Features ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=17.5V ● Low Saturation Voltage

NPN SILICON PLANAR MEDIUM POWER

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes Page：7 Pages

NPN, 17.5V, 5A, SOT223

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

Features • BVCEO > 17.5V • BVCES > 50V • IC = 5A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223

文件：506.28 Kbytes Page：7 Pages

NPN Transistors

文件：820.52 Kbytes Page：3 Pages

17.5V NPN MEDIUM POWER HIGH GAIN TRANSISTOR

文件：676.96 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 17.5V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 17.5V 5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

3.3V LVDS 4-Bit Flow-Through High Speed Differential Receiver

General Description This quad receiver is designed for high speed interconnect utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100mV, to LVTTL signal levels. LVDS provides low EMI at ultra low po

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors