HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.58Ω • ID ...................................................................... –6A • Integrated Fast Recovery Dio

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.58Ω • ID ...................................................................... –6A • Integrated Fast Recovery Dio

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.58 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

Power MOSFETs

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.58 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.