HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 0.21Ω • ID ...................................................................... –6A • Integrated Fast Recovery Di

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 0.21Ω • ID ...................................................................... –6A • Integrated Fast Recovery Di

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 0.21 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

Power MOSFETs

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 0.21 Ω • ID : – 6 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.