Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................