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FX30价格
参考价格：￥4145.4000
型号：FX301B-03 品牌：Hakko 备注：这里有FX30多少钱，2025年最近7天走势，今日出价，今日竞价，FX30批发/采购报价，FX30行情走势销售排行榜，FX30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C-NET AUDIO PROCESSOR [CML Semiconductor] Brief Description The FX304 is a duplex filter array and frequency inversion scrambler compatible with the Net-C specification. Features/Applications ● Full Duplex Audio Processing ● Designed to meet Net-C Cellular Specification ● On-Chip Audio Bandpass Filters (300-3000H | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
Obsolete Product For Information Only. [CML] DELTA CODEC HYBRID | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 61 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | Mitsubishi 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | Mitsubishi 三菱电机 | | ||
High-Speed Switching Use Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | POWEREX | | ||
High-Speed Switching Use Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1 | Mitsubishi 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1 | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........10 | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode | Mitsubishi 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
包装：散装 描述：DC POWER CABLE RF/IF，射频/中频和 RFID RF 配件 | SierraWireless | | ||
包装：袋 描述：MOUNTING BRACKET RF/IF，射频/中频和 RFID RF 配件 | SierraWireless | | ||
Frequency Sensitive Switch | CMLMICRO | | ||
双差分放大器 | semifg 振华风光 | | ||
C-Net Audio Processor | CMLMICRO | | ||
C-NET AUDIO PROCESSOR 文件：224.7 Kbytes Page：6 Pages | CMLMICRO | | ||
C-NET AUDIO PROCESSOR 文件：224.7 Kbytes Page：6 Pages | CMLMICRO | | ||
C-NET AUDIO PROCESSOR 文件：224.7 Kbytes Page：6 Pages | CMLMICRO | | ||
C-NET AUDIO PROCESSOR 文件：224.7 Kbytes Page：6 Pages | CMLMICRO | | ||
AUDIO FILTER ARRAY 文件：259.7 Kbytes Page：6 Pages | CMLMICRO | | ||
AUDIO FILTER ARRAY 文件：259.7 Kbytes Page：6 Pages | CMLMICRO | | ||
AUDIO FILTER ARRAY 文件：259.7 Kbytes Page：6 Pages | CMLMICRO | | ||
MEETS EUROCOM D1-IA8 SPECIFICATION 文件：236.24 Kbytes Page：8 Pages | CMLMICRO | | ||
HIGH-SPEED SWITCHING USE 文件：44.68 Kbytes Page：4 Pages | Mitsubishi 三菱电机 | | ||
isc P-Channel MOSFET Transistor 文件：378.98 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE 文件：85.1 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE 文件：85.1 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE 文件：110.02 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
FX30产品属性
- 类型
描述
- 型号
FX30
- 制造商
HAKKO Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MX-COM |
24+ |
NA/ |
3262 |
原装现货,当天可交货,原型号开票 |
|||
CML |
2016+ |
QFP20 |
1000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MX-COM |
25+ |
DIP |
12 |
原装正品,假一罚十! |
|||
MX-COM |
DIP |
12 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
CML |
24+/25+ |
500 |
原装正品现货库存价优 |
||||
CML |
PLCC |
3350 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CML |
23+ |
QFP |
3600 |
绝对全新原装!现货!特价!请放心订购! |
|||
CML-IT |
QQ咨询 |
DIP |
181 |
全新原装 研究所指定供货商 |
|||
IKANOS |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
CML |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
FX30规格书下载地址
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
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