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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | Mitsubishi 三菱电机 |   | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
Isc P-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management | ISC 无锡固电 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：1.64233 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
FX20KMJ产品属性
- 类型
描述
- 型号
FX20KMJ
- 功能描述
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | SOT-186
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
111 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
三菱 |
23+ |
TO-220F |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
MIT |
23+ |
TO-220F |
5000 |
专做原装正品,假一罚百! |
|||
MITSUBISHI |
24+ |
TO-220F |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Renesas |
17+ |
TO-220F |
6200 |
||||
MITSUBISHI |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
MITSUBISHI |
23+ |
MODULE |
3500 |
MITSUBISHI系列在售 |
|||
MITSUBISHI |
23+ |
MODULE |
2800 |
专业配单,原装正品假一罚十,代理渠道价格优 |
FX20KMJ规格书下载地址
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FX20KMJ数据表相关新闻
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FW82801FB
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GT8E-5S-HU 52957-1 284322-1 350766-4 1-647402-0 3-647003-4 66506-3 103653-3 1062-16-1222 2-967624-1 TN025-00200 1928403110 926887-1 16-04477 640452-5 640453-5 7183-7771-80 HD36-24-16SE-059 53254-0570 PPI0001486 368503-1 SKRAAQE010 1827571-2 08-65-0805 165
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FX2CA2-100S-1.27DSA(71)
2021-1-25FW80309V-DB，FY4AEJ-03-T13，FY8ABJ-03-T13，G07007SB，FS3VS-9，兴中扬专业，专注，专一
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-6-6
DdatasheetPDF页码索引
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