位置：首页 > IC中文资料第11583页 > FX20KMJ
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  |   | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 0.13Ω • ID .................................................................... –20A • Integrated Fast Recovery Dio | POWEREX Powerex Power Semiconductors |  | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.13 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
Isc P-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications • Load switch • Power management | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: – 100 V • rDS(ON) (max): 0.26 Ω • ID: – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 0.29 Ω • ID : –20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
P-Channel 60 V (D-S) MOSFET 文件：1.64233 Mbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
FX20KMJ产品属性
- 类型
描述
- 型号
FX20KMJ
- 功能描述
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | SOT-186
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
111 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MIT |
25+ |
TO-220F |
10 |
原装正品,假一罚十! |
|||
MITSUBISH |
1932+ |
TO-220F |
811 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三菱 |
23+ |
TO-220F |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
MIT |
23+ |
TO-220F |
5000 |
专做原装正品,假一罚百! |
|||
R |
25+ |
TO-TO-220FN |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
MITSUBISHI |
24+ |
TO-220F |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
23+ |
7300 |
专注配单,只做原装进口现货 |
|||||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Renesas |
17+ |
TO-220F |
6200 |
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FX20KMJ规格书下载地址
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-6-6
DdatasheetPDF页码索引
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