| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | Mitsubishi 三菱电机 |   | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | POWEREX | | ||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ................................................................................–30V • rDS (ON) (MAX) .............................................................. 0.13Ω • ID ........................................................................... | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 0.12 Ω • ID : – 20 A Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 97mΩ • ID .................................................................... –20A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 60 V • rDS(ON) (max) : 97 mΩ • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 0.26Ω • ID .................................................................... –20A • Integrated Fast Recovery | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor 文件：379.49 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE | POWEREX | | ||
HIGH-SPEED SWITCHING USE 文件：104.47 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET 文件：98.75 Kbytes Page：6 Pages | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor 文件：379.87 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor 文件：379.2 Kbytes Page：2 Pages | ISC 无锡固电 | |
FX20ASJ产品属性
- 类型
描述
- 型号
FX20ASJ
- 制造商
Renesas Electronics Corporation
- 功能描述
TRANS MOSFET P-CH 60V 20A 3PIN MP-3A - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三凌 |
24+ |
NA/ |
34050 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
25+ |
SOT-252 |
2000 |
原装正品,假一罚十! |
|||
MITSUBISHI |
99+ |
SOT-252 |
15000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
TO-252 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
RENESAS |
25+23+ |
TO252 |
75415 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
NEWINORIGINAL |
24+ |
TO-252 |
11700 |
新进库存/原装 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
FX20ASJ芯片相关品牌
FX20ASJ规格书下载地址
FX20ASJ参数引脚图相关
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FX20ASJ数据表相关新闻
FW82801FB
FW82801FB
2023-6-25FX10A-144S-SV新到货专营连接器，只做进口！
GT8E-5S-HU 52957-1 284322-1 350766-4 1-647402-0 3-647003-4 66506-3 103653-3 1062-16-1222 2-967624-1 TN025-00200 1928403110 926887-1 16-04477 640452-5 640453-5 7183-7771-80 HD36-24-16SE-059 53254-0570 PPI0001486 368503-1 SKRAAQE010 1827571-2 08-65-0805 165
2022-8-12FX32K144HAT0MLHT深圳市芯为科技有限公司
NXP
2022-4-6FX2CA2-100S-1.27DSA(71)
FX2CA2-100S-1.27DSA(71)
2021-1-25FW80309V-DB，FY4AEJ-03-T13，FY8ABJ-03-T13，G07007SB，FS3VS-9，兴中扬专业，专注，专一
FW80309V-DB，FY4AEJ-03-T13，FY8ABJ-03-T13，G07007SB，FS3VS-9，兴中扬专业，专注，专一
2020-1-4FX30B-5S-3.81DSA
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-6-6
DdatasheetPDF页码索引
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