30V Dual N-Channel MOSFETs

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Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON3812 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swi

Ultra-High Value Precision Resistor

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Ultra-High Value Precision Resistors

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Ultra-High Value Precision Resistors

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Low voltage coefficient

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