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AON3812中文资料

厂家型号

AON3812

文件大小

123.62Kbytes

页面数量

4

功能描述

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

AOSMD

AON3812数据手册规格书PDF详情

General Description

The AON3812 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications).

Features

VDS (V) = 30V

ID = 6A (VGS = 10V)

RDS(ON) < 27mΩ (VGS = 10V)

RDS(ON) < 30mΩ (VGS = 4.5V)

RDS(ON)

AON3812产品属性

  • 类型

    描述

  • 型号

    AON3812

  • 制造商

    AOSMD

  • 制造商全称

    Alpha & Omega Semiconductors

  • 功能描述

    Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

更新时间:2025-11-23 11:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
AO
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AO
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18424
公司现货库存 支持实单
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25+
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百分百原装正品 真实公司现货库存 本公司只做原装 可
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