Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

TRANSISTOR:Genreal Purpuse

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

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