DIODE TRIO WAI TYPE Low forward voltage drop

Features * Low forward voltage drop * High current capability * High reliability ​​​​​​​* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Features * Low forward voltage drop * High current capability * High reliability ​​​​​​​* High surge current capability Mechanical Data * Case: OFC Heat Sink * Encap: Epoxy Sealed Rated UL94V-0 * Weight: 6.5 gram

DIODE TRIO WAI TYPE Low forward voltage drop

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

Epitaxial planar type NPN silicon transistor

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE(sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Low VCE(sat). ● Excellent DC Current Gain Characteristics.

TRANSISTOR:Genreal Purpuse