EEPROM-I²C

The FT24C256A series are 262,144 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 32,768 words of 8 bits (one byte) each.  The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications Low voltage and low power operations:\n    FT24C256A: VCC = 1.8V to 5.5V\n64 bytes page write mode.\nPartial page write operation allowed.\nInternally organized: 32,768 ×8 (256K).\nStandard 2-wire bi-directional serial interface.\nSchmitt trigger, filtered inputs for noise protection.\nSelf-timed wr;

EEPROM-I²C

The FT24C256A series are 262,144 bits of serial Electrical Erasable and Programmable Read Only Memory, commonly known as EEPROM. They are organized as 32,768 words of 8 bits (one byte) each.  The devices are fabricated with proprietary advanced CMOS process for low power and low voltage applications q  Low voltage and low power operations:\n·         FT24C256A:                     VCC = 1.8V to 5.5V\nq  64 bytes page write mode.\nq  Partial page write operation allowed.\nq  Internally organized: 32,768 ×8 (256K).\nq  Standard 2-wire bi-directional serial interface.\nq  Schmitt trigger, filtered;

EEPROM - I²C Bus

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC EEPROM 256KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：托盘 描述：IC EEPROM 256KBIT I2C 1MHZ 8SOP 集成电路（IC） 存储器

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to

256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect

General Description The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to