Schottky PowerMod

Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring for Reverse Protection ● Low forward voltage ● VRRM 30 to 45 Volts ● Electrically isolated base ● Reverse Energy Tested ● Center tap ● ROHS Compliant

SCHOTTKY DIODES MODULE TYPE 100A

100Amp Rectifier 20-100 Volts Features • High Surge Capability • Types Up to 100V VRRM

100 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

Silicon Power Schottky Diode

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封装/外壳：TO-249AB 包装：散装 描述：DIODE MODULE 35V 100A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Diodes

Schottky Rectifiers

Schottky PowerMod

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350Ω Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along w

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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