位置：首页 > IC中文资料第6245页 > FSS23A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS23A4D | 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil |   | |
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
Plug-in Signal Conditioners K-UNIT 文件：143.38 Kbytes Page：5 Pages | MSYSTEM 爱模 | |
FSS23A4D产品属性
- 类型
描述
- 型号
FSS23A4D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO |
SOP-8 |
35500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
||||
24+ |
SOP |
1000 |
|||||
SANYO三洋 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO |
24+ |
SOP-8 |
25000 |
一级专营品牌全新原装热卖 |
|||
SANYO |
2023+ |
SOP-8 |
50000 |
原装现货 |
|||
SANYO |
24+ |
SOP8 |
5000 |
只做原装公司现货 |
|||
SANYO/三洋 |
25+ |
SOP-8 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANYO |
2003 |
SOP-8P |
758 |
原装现货海量库存欢迎咨询 |
FSS23A4D规格书下载地址
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FSU05B60，全新原装当天发货或门市自取0755-82732291.
2019-11-14
DdatasheetPDF页码索引
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