位置：首页 > IC中文资料第6245页 > FSS23A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSS23A4D | 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | ||
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Pushbutton switch, multiple options of caps, 1 amp 文件：1.13579 Mbytes Page：8 Pages | APEX-ELECTRONICS | |
FSS23A4D产品属性
- 类型
描述
- 型号
FSS23A4D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
SOP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
||||
SANYO |
24+ |
SOP-8 |
25000 |
一级专营品牌全新原装热卖 |
|||
AD |
25+ |
SOP/8 |
3000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
|||
SANYO/三洋 |
23+ |
SOP-8 |
24190 |
原装正品代理渠道价格优势 |
|||
SANYO |
25+ |
SOP-8P |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
SANYO/三洋 |
20+ |
SOP-8 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO/三洋 |
25+ |
SOP-8 |
90000 |
全新原装现货 |
|||
SANYO三洋 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO/三洋 |
21+ |
SOP-8 |
6796 |
优势供应 实单必成 可13点增值税 |
|||
SANYO/三洋 |
25+ |
SOP-8 |
20000 |
原装 |
FSS23A4D规格书下载地址
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2019-11-14
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