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型号	功能描述	生产厂家企业	LOGO
FSS23	2 Amp. Surface Mounted Schottky Barrier Rectifier 文件：48.48 Kbytes Page：3 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
FSS23	Schottky Rectifiers	FAGOR 法格电子	FAGOR
FSS230D	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230D1	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230D3	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230R	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230R1	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230R3	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS230R4	8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS232	Load Switching Applications Features • Low ON resistance. • 4V drive.	SANYO 三洋	SANYO
FSS234	DC / DC Converter Applications Features • Low ON-resistance. • 4.0V drive. • Ultrahigh-speed switching.	SANYO 三洋	SANYO
FSS234D	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234D1	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234D3	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234R	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234R1	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234R3	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS234R4	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS238	Load Switching Applications Features • Low ON resistance. • 4V drive.	SANYO 三洋	SANYO
FSS239	Load Switching Applications Features • Low ON resistance. • 2.5V drive.	SANYO 三洋	SANYO
FSS23A0D	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0D1	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0D3	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0R	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0R1	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0R3	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A0R4	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K	INTERSIL	INTERSIL
FSS23A4D	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4D1	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4D3	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4R	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4R1	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4R3	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS23A4R4	7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul	INTERSIL	INTERSIL
FSS2300M	20V N-Channel Enhancement-Mode MOSFETs	FOSAN 富信半导体	FOSAN
FSS2300S	低压MOS管	FOSAN 富信半导体	FOSAN

FSS23产品属性

类型
描述
IF(AV) (A)：
2
VRRM (V)：
30
TRR (ns)：
>10
Vf (V)：
0.50
IFSM (A)：
50
Outline：
DO214AA/SMB

FSS23供应商更多...

更新时间：2026-5-15 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	FSS234-TL-E	onsemi(安森美)	25+	-	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市高捷芯城科技有限公司	FSS234-TL-E	onsemi(安森美)	25+	-	20948	样件支持,可原厂排单订货!	询价
上海意淼电子科技有限公司	FSS239-TL	SANYO	23+	SOP8	20000	全新原装假一赔十	询价
深圳市华睿芯科技有限公司	FSS234-TL-E	SANYO	24+	SOP8	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
中天科工半导体（深圳）有限公司	FSS237	ON	20+	SOP-8	32550	原装优势主营型号-可开原型号增税票	询价
深圳市宏世佳电子科技有限公司	FSS234-TL-E	SANYO	2025+	SOP8	3715	全新原厂原装产品、公司现货销售	询价
深圳市赛尔通科技有限公司	FSS23A0R3	F	23+		65480		询价
深圳市振宏微科技有限公司	FSS23TRTB	FAGOR	23+	NA	6716	专做原装正品,假一罚百!	询价
深圳市赛美科科技有限公司	FSS232-TL-E	SANYO/三洋	新年份	SOP-8	33288	原装正品现货,实单带TP来谈!	询价
深圳市英科美电子有限公司	FSS234-TL	SANYO/三洋	2223+	SO8	26800	只做原装正品假一赔十为客户做到零风险	询价

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找IC，尽在114IC

FSS23产品属性

FSS23供应商更多...

FSS23芯片相关品牌

FSS23规格书下载地址

FSS23参数引脚图相关

FSS23数据表相关新闻

FSV560

FSR04BE

FSR03CE

FSS1500NSR

FSUSB30UMX

FSU05B60

DdatasheetPDF页码索引