位置：首页 > IC中文资料第6244页 > FSL9130R
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL9130R | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL |   | |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
P-CHANNEL POWER MOSFETS FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability | SAMSUNG 三星 | | ||
TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH
| TOSHIBA 东芝 | | ||
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS 文件：20.72 Kbytes Page：2 Pages | SEME-LAB | | ||
P-CHANNEL POWER MOSFET 文件：16.9 Kbytes Page：2 Pages | SEME-LAB | |
FSL9130R产品属性
- 类型
描述
- 型号
FSL9130R
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild(飞兆/仙童) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
25+23+ |
原厂原包 |
23976 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
FAI |
23+ |
DIP8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAIRCHI |
24+ |
SMD |
12000 |
原厂/代理渠道价格优势 |
|||
NIEC |
24+ |
TO-220F-2pin |
8866 |
||||
FSC |
17+ |
DIP |
6200 |
100%原装正品现货 |
|||
Fairchild/ON |
22+ |
8DIP |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHI |
18+ |
DIP-8 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FSC |
20+ |
8-DIP |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
三年内 |
1983 |
只做原装正品 |
FSL9130R规格书下载地址
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