位置：首页 > IC中文资料第6314页 > FSL430D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL430D | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL |   | |
FSL430D | 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | INTERSIL | | ||
Phase Control SCR 680 Amperes Avg 500-1300 Volts
| POWEREX | | ||
Phase Control SCR 680 Amperes Avg 500-1300 Volts
| POWEREX | | ||
General Purpose 100MHz Op Amp with Disable 文件：1.11841 Mbytes Page：8 Pages | NSC 国半 | | ||
General Purpose 100MHz Op Amp with Disable 文件：1.11841 Mbytes Page：8 Pages | NSC 国半 | | ||
General Purpose 100MHz Op Amp with Disable 文件：1.11841 Mbytes Page：8 Pages | NSC 国半 | |
FSL430D产品属性
- 类型
描述
- 型号
FSL430D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
FSL430D规格书下载地址
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DdatasheetPDF页码索引
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