33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Military DC-DC Converters 50 to 100W

Military DC-DC Converters 50 to 100W Features Inputs: 28Vdc per MIL-STD-704D/E 155Vdc per MIL-STD-1399A 270Vdc per MIL-STD-704D/E Single output: 2 – 48Vdc Up to 23W/in3 MIL-STD-810 environments Up to 90 efficiency Remote sense Current limit OVP a

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE