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FSJ264D3中文资料

厂家型号

FSJ264D3

文件大小

48.26Kbytes

页面数量

9

功能描述

33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INTERSIL

FSJ264D3数据手册规格书PDF详情

Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Features

• 33A, 250V, rDS(ON) = 0.080Ω

• Total Dose

    - Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

    - Safe Operating Area Curve for Single Event Effects

    - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias

• Dose Rate

    - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

    - Typically Survives 2E12 if Current Limited to IDM

• Photo Current

    - 21nA Per-RAD(Si)/s Typically

• Neutron

    - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2

    - Usable to 1E14 Neutrons/cm2

FSJ264D3产品属性

  • 类型

    描述

  • 型号

    FSJ264D3

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

更新时间:2025-8-12 20:00:00
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