ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

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Flashers and Tower Lighting Controls

Description The FS300 Series of solid-state flashers were specifically designed to operate lamp loads. Their two-terminal series connection feature makes installation easy. The high immunity to line noise and transients makes the FS300 Series ideal for moving vehicle applications. All solid-s

Air Velocity Sensor Module

Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli

Air Velocity Sensor Module

Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli

Air Velocity Sensor Module

Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli

Environmental Sensors

Features ■ User-friendly EVK expedites configuration and evaluation of the Renesas environmental sensors for air quality, gasses, humidity, temperature and particulate matter ■ Supports all methods of operation for each sensor, including ultra-low power and AI technology for accurate and consist

Technische Information / technical information

- EconoPACK™ with trench/fieldstop IGBT3 and EmCon High Efficiency diode

Evaluation Driver Boards for EconoDUAL™3 and EconoPACK™ modules

The 2ED100E12-F2 and the 6ED100E12-F2 Evaluation Driver Board offer the following features:  Dual channel IGBT driver in 2ED100E12-F2 version, adapted for use with IGBT4  Six channel IGBT driver in 6ED100E12-F2 version  Electrically and mechanically suitable for 600 V and 1200 V EconoDUAL™ 3

1200 V、300 A 六组 IGBT 模块

EconoPACK™ + B-series 1200V sixpack IGBT module with TRENCHSTOP™IGBT3 and emitter controlled HE diode • Easy separation of DC and AC\n• Optimized Thermal Resistance Case to Heat Sink\n• Highest Power Density for compact Inverter Designs\n\n优势:\n• Compact Modules\n• Easy and most reliable assembly\n• No Plugs and Cables required\n• Ideal for Low Inductive System Designs;

IGBT模块

EconoPACK™ + B-series 1200V sixpack IGBT module with TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode • Easy separation of DC and AC\n• Optimized Thermal Resistance Case to Heat Sink\n• Highest Power Density for compact Inverter Designs\n\n优势:\n• Compact Modules\n• Easy and most reliable assembly\n• No Plugs and Cables required\n• Ideal for Low Inductive System Designs;

European Power- Semiconductor and Electronics Company GmbH Co. KG

European Power Semiconductor and Electronics Company GmbH + Co. KG IGBT-Module

EconoPACK™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 1200 V - IC nom = 300 A / ICRM = 600 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - High power and thermal cycling capability - Solder contact technology - Integrated NTC temperature sensor - Copper b

EconoPACK module with trench/fieldstop IGBT and EmCon3 diode

EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode

EconoPACK?? module with trench/fieldstop IGBT4 and Emitter Controlled쨀 diode

EconoPACK™+ module with trench/fieldstop IGBT4 and Emitter Controlled³ diode

FlashStation FS3017

Highlights • 200,000 4K Random Write IOPS1, ultrahigh performance with low latency • Dual Intel Xeon 6-core CPU and 64GB DDR4 ECC RDIMM, expandable up to 512GB • Dual onboard 10GBase-T ports, capable of installing optional 10GbE / 25GbE / 40GbE NICs with iSCSI over RDMA • Complete virtual

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 30 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 65 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 30 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 65 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 100 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 95 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 100mΩ ● ID

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 100mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 100 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 95 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 2.5V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 2.5V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 30V ● rDS (ON) (MAX) 38mΩ ● ID

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 30V ● rDS (ON) (MAX) 38mΩ ● ID

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 30V ● rDS (ON) (MAX) 38mΩ ● ID

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 84 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 84mΩ ● ID

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 84mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 84 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS 60V ● rDS (ON) (MAX) 30mΩ ● ID