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FS30价格
参考价格:¥2884.9867
型号:FS300R12KE3 品牌:Infineon 备注:这里有FS30多少钱,2025年最近7天走势,今日出价,今日竞价,FS30批发/采购报价,FS30行情走势销售排行榜,FS30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FS30 | ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS 文件:685.53 Kbytes Page:9 Pages | XPPOWER | ||
Flashers and Tower Lighting Controls Description The FS300 Series of solid-state flashers were specifically designed to operate lamp loads. Their two-terminal series connection feature makes installation easy. The high immunity to line noise and transients makes the FS300 Series ideal for moving vehicle applications. All solid-s | Littelfuse 力特 | |||
Air Velocity Sensor Module Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli | RENESAS 瑞萨 | |||
Air Velocity Sensor Module Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli | RENESAS 瑞萨 | |||
Air Velocity Sensor Module Features ■ Robust “solid” isolation technology ■ Resistant to surface contamination ■ Resistant to vibration and pressure shock ■ Low power application ■ Digital output: I2C ■ Supply voltage: 3.3V ■ Module operating temperature range: -20°C to +85°C ■ Module size: 8 × 9 × 3.7 mm Appli | RENESAS 瑞萨 | |||
Environmental Sensors Features ■ User-friendly EVK expedites configuration and evaluation of the Renesas environmental sensors for air quality, gasses, humidity, temperature and particulate matter ■ Supports all methods of operation for each sensor, including ultra-low power and AI technology for accurate and consist | RENESAS 瑞萨 | |||
Technische Information / technical information - EconoPACK™ with trench/fieldstop IGBT3 and EmCon High Efficiency diode | eupec | |||
Evaluation Driver Boards for EconoDUAL™3 and EconoPACK™ modules The 2ED100E12-F2 and the 6ED100E12-F2 Evaluation Driver Board offer the following features: Dual channel IGBT driver in 2ED100E12-F2 version, adapted for use with IGBT4 Six channel IGBT driver in 6ED100E12-F2 version Electrically and mechanically suitable for 600 V and 1200 V EconoDUAL™ 3 | Infineon 英飞凌 | |||
European Power- Semiconductor and Electronics Company GmbH Co. KG European Power Semiconductor and Electronics Company GmbH + Co. KG IGBT-Module | eupec | |||
EconoPACK™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 300 A / ICRM = 600 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - High power and thermal cycling capability - Solder contact technology - Integrated NTC temperature sensor - Copper b | Infineon 英飞凌 | |||
EconoPACK module with trench/fieldstop IGBT and EmCon3 diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode | eupec | |||
EconoPACK?? module with trench/fieldstop IGBT4 and Emitter Controlled쨀 diode EconoPACK™+ module with trench/fieldstop IGBT4 and Emitter Controlled³ diode | Infineon 英飞凌 | |||
FlashStation FS3017 Highlights • 200,000 4K Random Write IOPS1, ultrahigh performance with low latency • Dual Intel Xeon 6-core CPU and 64GB DDR4 ECC RDIMM, expandable up to 512GB • Dual onboard 10GBase-T ports, capable of installing optional 10GbE / 25GbE / 40GbE NICs with iSCSI over RDMA • Complete virtual | SYNOLOGY 群晖科技 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID .......................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID .......................................................................... | POWEREX | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 30 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 65 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) : 30 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 65 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ........................................................... 100mΩ ● ID ............................................................................. | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ........................................................... 100mΩ ● ID ............................................................................. | POWEREX | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 100 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 95 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =100mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 10 V • VDSS : 100 V • rDS(ON) (max) : 100 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 95 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 2.5V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID ......................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 2.5V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID ......................................................................... | RENESAS 瑞萨 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................38mΩ ● ID ........................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................38mΩ ● ID ........................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS .................................................................................. 30V ● rDS (ON) (MAX) ..............................................................38mΩ ● ID ........................................................................... | RENESAS 瑞萨 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................ | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................ | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................ | RENESAS 瑞萨 | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ............................................................................... 100V ● rDS (ON) (MAX) ............................................................. 84mΩ ● ID ............................................................................. | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ............................................................................... 100V ● rDS (ON) (MAX) ............................................................. 84mΩ ● ID ............................................................................. | POWEREX | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 84 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS : 100 V • rDS(ON) (max) : 84 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
30.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID .......................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID .......................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS .................................................................................. 60V ● rDS (ON) (MAX) ..............................................................30mΩ ● ID .......................................................................... | RENESAS 瑞萨 |
FS30产品属性
- 类型
描述
- 型号
FS30
- 功能描述
Analog IC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EUPEC |
07+特价模块 |
30A600V |
77 |
全新进口原装绝对公司现货特价! |
|||
MITSUBISHI |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
Infineon |
22+ |
IGBT |
5138 |
原装现货、工厂库存 |
|||
INFINEON/英飞凌 |
25+ |
IGBT |
32360 |
INFINEON/英飞凌全新特价FS30R06VE3即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
25+ |
IGBT |
3000 |
全新原装正品支持含税 |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
26+ |
TO-220F |
360000 |
进口原装现货 |
|||
25+ |
TO220F |
6500 |
十七年专营原装现货一手货源,样品免费送 |
||||
Renesas |
24+ |
TO-252-2 |
9860 |
一级代理/全新现货/长期供应! |
|||
Infineon(英飞凌) |
24+ |
- |
909 |
原厂订货渠道,支持BOM配单一站式服务 |
FS30规格书下载地址
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2019-8-21
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