Power MOSFETs

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.33Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................