Tower and Obstruction Lighting Controls

Description The FA/FS Series have proven their reliability through years of use on communication towers, smoke stacks, cooling towers, tall buildings, bridges and utility towers. The highest quality components are encapsulated in a rugged plastic housing with a molded-in heat transfer plate.

Tower and Obstruction Lighting Controls

Description The FA/FS Series have proven their reliability through years of use on communication towers, smoke stacks, cooling towers, tall buildings, bridges and utility towers. The highest quality components are encapsulated in a rugged plastic housing with a molded-in heat transfer plate.

8.5V Adaptive Charge Pump SPC Audio Amplifier

FS1559SN是一款模拟输入的SPC音频功放芯片，具备高性能、低功耗的特性，搭配傅里叶Smart Power Control功率保护算法和FS Sound音效算法，适用手机、平板、智能手表、智能家居等设备。

功能：重复周期 包装：散装 描述：RELAY TIME DELAY 30 FPM 工业自动化与控制 延时继电器

功能：重复周期 包装：散装 描述：RELAY TIME DELAY 30FPM CHASSIS 工业自动化与控制 延时继电器

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package