HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 450V ● rDS (ON) (MAX) .............................................................. 0.73Ω ● ID ......................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 450V ● rDS (ON) (MAX) .............................................................. 0.73Ω ● ID ......................................................................................

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 450V ● rDS (ON) (MAX) .............................................................. 0.73Ω ● ID ......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.73Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 450 V • rDS(ON) (max) : 0.73 Ω • ID : 10 A Applications DC-DC, PDP, lamp ballast, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 10 V • VDSS : 450 V • rDS(ON) (max) : 0.73 Ω • ID : 10 A Applications DC-DC, PDP, lamp ballast, etc.

FS10VS-9_15

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Power MOSFETs

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.92Ω ● ID ........................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 450V ● rDS (ON) (MAX) ............................................................. 0.92Ω ● ID ........................................................................................