HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................450V ●rDS(ON)(MAX).............................................................0.92Ω ●ID........................................................................................

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS...............................................................................450V ●rDS(ON)(MAX).............................................................0.92Ω ●ID........................................................................................

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.92Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

HIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.73Ω ●ID......................................................................................

NchPOWERMOSFETHIGH-SPEEDSWITCHINGUSE

HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX)..............................................................0.73Ω ●ID......................................................................................