HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID .......................................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................500V ● rDS (ON) (MAX) .............................................................. 0.90Ω ● ID .......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ..............................................................0.90Ω ● ID ...........................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................