位置：首页 > IC中文资料第6033页 > FRS430D1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil |   | ||
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with | Intersil | |
FRS430D1产品属性
- 类型
描述
- 型号
FRS430D1
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-257AA
FRS430D1芯片相关品牌
FRS430D1规格书下载地址
FRS430D1参数引脚图相关
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FRS430D1数据表相关新闻
FRU900-30F
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