17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mW. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs

1/2 (12.7 mm) Single - Turn Wirewound Bushing Mount Type Precision Potentiometer

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Mechanical stops on request • High torque and sealed versions available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件：115.71 Kbytes Page：2 Pages

THREADED INSERT, BLIND, REGULAR HEAD STYLE MEDIUM DUTY

文件：123.62 Kbytes Page：1 Pages

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

Mechanical stops on request

文件：90.76 Kbytes Page：3 Pages