Second Generation Rad Hard MOSFET Results

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6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs

Celeron M Processor on 65 nm Process

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Supporting the Intel Celeron processor

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Surface Mount Fuses

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Sanding

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The 440A Series AECQ-Compliant fuses are specifically tested to cater to secondary circuit protection needs of compact auto electronics applications

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