12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutro

12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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Performs measurements for liquid level, interface or density of liquids

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FOUR DIGITS DISPLAY

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FOUR DIGITS DISPLAY

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