POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD243 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD243 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the BD243 Series ● 65 W at 25°C Case Temperature ● 6 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD243/A/B/C APPLICATIONS • For medium power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type BD243/A/B/C APPLICATIONS • For medium power linear and switching applications

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ■ STMicroelectronics PREFERRED SALES

PLASTIC POWER TRANSISTORS

BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS

SILICON PNP POWER TRANSISTORS

The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The complementary is BD243, A, B, C Compliance to RoHS.

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-220C package • Complement to type BD243/A/B/C APPLICATIONS • For medium power linear and switching applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively.

6.0 A，80 V，PNP 双极功率晶体管

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices. • Collector - Emitter Saturation Voltage -VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc\n• Collector Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min)BD243B, BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C\n• High Current Gain Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc\n• Compact TO-220 AB ;

Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-220AB Bulk

Transistor

Silicon PNP Power Transistor

文件：128.31 Kbytes Page：2 Pages

Silicon NPN Power Transistors

文件：91.77 Kbytes Page：3 Pages

Complementary Silicon Plastic Power Transistors

文件：97.31 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 80V 6A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

Complementary Silicon Plastic Power Transistors

文件：103.58 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 80V 6A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS