8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件：489.59 Kbytes Page：3 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：54.85 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：260.39 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：47.99 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：178.49 Kbytes Page：3 Pages

8.0AMP. Glass Passivated Fast Recovery Rectifiers

文件：203.15 Kbytes Page：2 Pages

快恢复二极管

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：260.39 Kbytes Page：2 Pages

8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

文件：47.99 Kbytes Page：2 Pages

8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件：558.56 Kbytes Page：3 Pages

封装/外壳：TO-220-2 包装：卷带（TR） 描述：DIODE FAST REC TO-220AC 分立半导体产品 二极管 - 整流器 - 单

快恢复二极管

8 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件：416.41 Kbytes Page：3 Pages

封装/外壳：TO-220-2 隔离片 包装：卷带（TR） 描述：DIODE FAST REC ITO-220AC 分立半导体产品 二极管 - 整流器 - 单

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead