FAST RECOVERY GLASS PASSIVATED RECTIFIER

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Ampere FEATURES • Glass passivated chip junction • Fast switching speed for high efficiency • Low reverse leakage • High forward surge current capacity • High temperature soldering guaranteed: 260 °C/10 second

8.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

GLASS PASSIVATED FAST RECOVERY RECTIFIERS

Features Glass Passivated Die Construction High Current Capability Low Reverse Leakage Current Fast Switching High Surge Current Capability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request

FRD芯片

• 先进的Photo Glass工艺，从技术上提升了芯片的可靠性。\n\n• 玻璃、Sipos (半绝缘多晶硅）、LTO (低温氧化膜）三层钝化保护，显著提升了芯片的抗高温能力以及封装良率。\n\n• 快速的TRR分布。\n\n• 有竞争性的成本及价格。

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead