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FR203GP

2 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

Features ● High Current Capability ● Fast Switching Speed For High Efficiency ● Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information)

MCC

FR203GP

2Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 volts

Features · Low Cost · Low Leakage · Low Forward Voltage Drop · High Current Capability · Fast Switching Speed For High Efficiency · Glass Passivated Junction

CHENYI

商朗电子

FR203GP

2 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts

文件:448.77 Kbytes Page:4 Pages

MCC

封装/外壳:DO-204AC,DO-15,轴向 包装:带盒(TB) 描述:DIODE GPP GAST 2A DO-15 分立半导体产品 二极管 - 整流器 - 单

MCC

FAST RECOVERY RECTIFIER

文件:84.52 Kbytes Page:2 Pages

CHENMKO

力勤

封装/外壳:DO-204AC,DO-15,轴向 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE GPP GAST 2A DO-15 分立半导体产品 二极管 - 整流器 - 单

MCC

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

PHILIPS

飞利浦

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

PHILIPS

飞利浦

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

POLYFET

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

MOSPEC

统懋

更新时间:2026-5-19 11:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
48000
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MCC
25+
电联咨询
7800
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