Features

• 4.0 A, 500 V, RDS(on) = 1.4 Ω @VGS = 10 V

• Low Gate Charge (Typ. 18 nC)

• Low Crss (Typ. 15 pF)

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

Description

This N-Channel enhancement mode power MOSFET is

produced using ON Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance and

high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction

(PFC), and electronic lamp ballasts.