200V N-Channel MOSFET

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.2A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

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MOSFET N-CH 200V 3A IPAK

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 200V RDSON (MAX.) 140mΩ ID 15A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

200V N-Channel MOSFET

Features • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 5.0 nC) • Low Crss ( typical 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

200V N-Channel MOSFET

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

N-Channel QFET MOSFET 200 V, 3.0 A, 1.4

Features • 3.0 A, 200 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V • Low gate charge (Typ. 5.0 nC) • Low Crss (Typ. 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability