丝印代码：FQU1N60C；N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω

Features • 1 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar st

600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =11.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

功率 MOSFET，N 沟道，QFET®，600 V，1 A，11.5 Ω，IPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •1A, 600V, RDS(on)= 11.5Ω（最大值）@VGS = 10 V, ID = 0.5A栅极电荷低（典型值：4.8nC)\n•低 Crss（典型值3.5pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准\n• RoHS Compliant;

600V N-Channel MOSFET

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N-Channel QFET짰 MOSFET 600 V, 1.0 A, 11.5 廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

PowerMOS transistor Isolated version of PHP1N60E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow