位置：首页 > IC中文资料第7694页 > FQU19N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU19N10 | 100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 |   | |
FQU19N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET 文件：684.38 Kbytes Page：9 Pages | FAIRCHILD 仙童半导体 | | ||
100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | |
FQU19N10产品属性
- 类型
描述
- 型号
FQU19N10
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
100V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-251 |
15000 |
本公司 只做全新原装正品 |
|||
FAIRCHILD/仙童 |
25+ |
TO-251 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD |
24+ |
TO-251(IPAK) |
8866 |
||||
FAIRC |
2023+ |
TO-251(IPAK) |
50000 |
原装现货 |
|||
FAIRCHILD/仙童 |
21+ |
TO251 |
1210 |
||||
FAIRCHILD/仙童 |
25+ |
TO-251 |
45000 |
FAIRCHILD/仙童全新现货FQU19N10L即刻询购立享优惠#长期有排单订 |
|||
F |
23+ |
TO-251 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
仙童 |
06+ |
TO-251 |
5000 |
原装 |
|||
FAIRCHILD/仙童 |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
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FQU19N10规格书下载地址
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2021-1-14
DdatasheetPDF页码索引
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