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FQD19N10价格

参考价格:¥1.9064

型号:FQD19N10LTM 品牌:Fairchild 备注:这里有FQD19N10多少钱,2026年最近7天走势,今日出价,今日竞价,FQD19N10批发/采购报价,FQD19N10行情走势销售排行榜,FQD19N10报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:FQD19N10;100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

UMW

友台半导体

FQD19N10

100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

UMW

友台半导体

FQD19N10

功率 MOSFET,N 沟道,QFET®,100 V,15.6 A,63 mΩ,DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •15.6A, 100V, RDS(on)= 63mΩ(最大值)@VGS = 10 V, ID = 7.8A栅极电荷低(典型值:19nC)\n•低 Crss(典型值32pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

FQD19N10

100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FAIRCHILD

仙童半导体

FQD19N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FQD19N10

100V N-Channel MOSFET

文件:684.38 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

FQD19N10

N-Channel QFET MOSFET

文件:545.19 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

FQD19N10

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

文件:1.20347 Mbytes Page:8 Pages

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FAIRCHILD

仙童半导体

功率 MOSFET,N 沟道,逻辑电平,QFET®,100 V,15.6 A,100 mΩ,DPAK

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻,并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •15.6A, 100V, RDS(on)= 100mΩ(最大值)@VGS = 10 V, ID = 7.8A栅极电荷低(典型值:14nC)\n•低 Crss(典型值35pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

BYCHIP

百域芯

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

BYCHIP

百域芯

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

BYCHIP

百域芯

100V N-Channel MOSFET

文件:684.38 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET

文件:545.19 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

N-Channel QFET MOSFET

文件:530.84 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

N-Channel 100 V (D-S) MOSFET

文件:1.01047 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel QFET MOSFET

文件:530.84 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

D-PAK Tape and Reel Data D-PAK Packaging Configuration: Figure 1.0

文件:406.75 Kbytes Page:2 Pages

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FAIRCHILD

仙童半导体

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FAIRCHILD

仙童半导体

FQD19N10产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    100

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    4

  • ID Max (A):

    15.6

  • PD Max (W):

    50

  • RDS(on) Max @ VGS = 10 V(mΩ):

    100

  • Qg Typ @ VGS = 10 V (nC):

    19

  • Ciss Typ (pF):

    600

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-5-20 16:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
20+
TO-252.220.263
78912
全新 发货1-2天
Fairchild(飞兆/仙童)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
23+
D-PAK
9476
公司只做原装正品,假一赔十
ONSEMI
25+
NA
2500
全新原装!优势库存热卖中!
FAIRCHILD
26+
TO-263D2-PAK
86720
全新原装正品价格最实惠 假一赔百
FAIRCHILD
24+
TO-252
4200
只做原装正品现货 欢迎来电查询15919825718
FSC
26+
DIP-8
890000
一级总代理商原厂原装大批量现货 一站式服务
ON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
原厂
23+
TO-252
5000
原装正品,假一罚十

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