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FQD19N10价格
参考价格：￥1.9064
型号：FQD19N10LTM 品牌：Fairchild 备注：这里有FQD19N10多少钱，2025年最近7天走势，今日出价，今日竞价，FQD19N10批发/采购报价，FQD19N10行情走势销售排行榜，FQD19N10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD19N10 | 100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
FQD19N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD19N10 | 100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
FQD19N10 | N-Channel QFET MOSFET 文件：545.19 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD19N10 | N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 文件：1.20347 Mbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
FQD19N10 | 100V N-Channel MOSFET 文件：684.38 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
100V N-Channel MOSFET 文件：684.38 Kbytes Page：9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel QFET MOSFET 文件：545.19 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel QFET MOSFET 文件：530.84 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.01047 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel QFET MOSFET 文件：530.84 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
D-PAK Tape and Reel Data D-PAK Packaging Configuration: Figure 1.0 文件：406.75 Kbytes Page：2 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET 文件：232.7 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：333.11 Kbytes Page：8 Pages | UTC 友顺 | |
FQD19N10产品属性
- 类型
描述
- 型号
FQD19N10
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
100V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
2015+ |
40 |
公司现货库存 |
|||||
仙童 |
06+ |
TO-252 |
12000 |
原装 |
|||
Freescale(飞思卡尔) |
24+ |
标准封装 |
7441 |
我们只是原厂的搬运工 |
|||
FAIRCHILD |
23+ |
TO-252 |
7300 |
专注配单,只做原装进口现货 |
|||
FSC |
21+ |
TO-252 |
238 |
原装现货假一赔十 |
|||
ONSEMI |
20+ROHS |
NA |
2500 |
全新原装!优势库存热卖中! |
|||
FAIRCHI |
21+ |
TO-252 |
12588 |
原装正品,自己库存 假一罚十 |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
FQD19N10规格书下载地址
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