FQD19N10价格

参考价格:¥1.9064

型号:FQD19N10LTM 品牌:Fairchild 备注:这里有FQD19N10多少钱,2025年最近7天走势,今日出价,今日竞价,FQD19N10批发/采购报价,FQD19N10行情走势销售排行榜,FQD19N10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FQD19N10

100V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FQD19N10

100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

UMW

友台半导体

FQD19N10

功率 MOSFET,N 沟道,QFET®,100 V,15.6 A,63 mΩ,DPAK

ONSEMI

安森美半导体

FQD19N10

100V N-Channel MOSFET

文件:684.38 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-Channel QFET MOSFET

文件:545.19 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQD19N10

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

文件:1.20347 Mbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

Bychip

百域芯

100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

UMW

友台半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

Bychip

百域芯

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

Bychip

百域芯

100V N-Channel MOSFET

文件:684.38 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET MOSFET

文件:545.19 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel QFET MOSFET

文件:530.84 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 100 V (D-S) MOSFET

文件:1.01047 Mbytes Page:7 Pages

VBSEMI

微碧半导体

功率 MOSFET,N 沟道,逻辑电平,QFET®,100 V,15.6 A,100 mΩ,DPAK

ONSEMI

安森美半导体

N-Channel QFET MOSFET

文件:530.84 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

D-PAK Tape and Reel Data D-PAK Packaging Configuration: Figure 1.0

文件:406.75 Kbytes Page:2 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

UTC

友顺

100V N-Channel MOSFET

文件:232.7 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件:333.11 Kbytes Page:8 Pages

UTC

友顺

FQD19N10产品属性

  • 类型

    描述

  • 型号

    FQD19N10

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    100V N-Channel MOSFET

更新时间:2025-9-24 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-252
9203
支持大陆交货,美金交易。原装现货库存。
ON/安森美
24+
TO-252
12500
原装正品现货,假一罚十
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
FAIRCILD
22+
TO-252
8000
原装正品支持实单
FAIRCHIL
2023+
TO-252
50000
原装现货
Freescale(飞思卡尔)
24+
标准封装
7441
我们只是原厂的搬运工
Fairchild(飞兆/仙童)
2023+
N/A
4550
全新原装正品
FAIRCHILD/仙童
24+
TO252
8950
BOM配单专家,发货快,价格低
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ONSEMI
20+ROHS
NA
2500
全新原装!优势库存热卖中!

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