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FQD19N10价格
参考价格：￥1.9064
型号：FQD19N10LTM 品牌：Fairchild 备注：这里有FQD19N10多少钱，2025年最近7天走势，今日出价，今日竞价，FQD19N10批发/采购报价，FQD19N10行情走势销售排行榜，FQD19N10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD19N10 | 100V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | Fairchild 仙童半导体 |   | |
FQD19N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
FQD19N10 | 100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) | UMW 友台半导体 | | |
FQD19N10 | 功率 MOSFET，N 沟道，QFET®，100 V，15.6 A，63 mΩ，DPAK | ONSEMI 安森美半导体 | | |
FQD19N10 | N-Channel QFET MOSFET 文件：545.19 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | |
FQD19N10 | N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 文件：1.20347 Mbytes Page：8 Pages | Fairchild 仙童半导体 | | |
FQD19N10 | 100V N-Channel MOSFET 文件：684.38 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | Fairchild 仙童半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
100V N -Channel MOSFET Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON) | UMW 友台半导体 | | ||
N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | Fairchild 仙童半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
100V N-Channel MOSFET 文件：684.38 Kbytes Page：9 Pages | Fairchild 仙童半导体 | | ||
N-Channel QFET MOSFET 文件：545.19 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
N-Channel QFET MOSFET 文件：530.84 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
N-Channel 100 V (D-S) MOSFET 文件：1.01047 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，15.6 A，100 mΩ，DPAK | ONSEMI 安森美半导体 | | ||
N-Channel QFET MOSFET 文件：530.84 Kbytes Page：8 Pages | Fairchild 仙童半导体 | | ||
D-PAK Tape and Reel Data D-PAK Packaging Configuration: Figure 1.0 文件：406.75 Kbytes Page：2 Pages | Fairchild 仙童半导体 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and | UTC 友顺 | | ||
100V N-Channel MOSFET 文件：232.7 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE 文件：333.11 Kbytes Page：8 Pages | UTC 友顺 | |
FQD19N10产品属性
- 类型
描述
- 型号
FQD19N10
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
100V N-Channel MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
友台UMW |
25+ |
DIP |
2500 |
国产替换现货降本 |
|||
ON |
2025+ |
TO-252 |
3000 |
原装正品现货供应商原厂渠道物美价优 |
|||
UMW |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
FAIRCHILD/仙童 |
13+15+ |
TO-252 |
19 |
||||
FAIRCHILD/仙童 |
新年份 |
TO-252 |
69850 |
一级代理原装正品现货,支持实单! |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
25549 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Fairchild |
24+ |
TO-252 |
1000 |
原装正品现货 |
|||
FAIRCHILD/仙童 |
11+ |
TO-252 |
120 |
原装现货 |
|||
三年内 |
1983 |
只做原装正品 |
FQD19N10规格书下载地址
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