P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

P-Channel QFET® MOSFET -60 V, -12 A, 135 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

P-Channel QFET짰 MOSFET -60 V, -12 A, 135 m廓

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

-60V P-Channel MOSFET

Description This advanced MOSFET technology has been es pecially tailored to reduce on-st ate resistance, and to provi de super ior sw itching performa nce and high avala nche energy strength . These device s are suitable for switched mode powe r supplies , audio ampl ifier, DC motor control,

P-Channel QFET MOSFET

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